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| AO9926E Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specifications). AO9926EL is a Green Product ordering option. AO9926E and AO9926EL are Features VDS (V) = 20V ID = 8A (VGS = 4.5V) RDS(ON) < 21m (VGS = 4.5V) RDS(ON) < 25m (VGS = 2.5V) RDS(ON) < 33m (VGS = 1.8V) ESD Rating: 2000V HBM D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D2 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 20 8 8 6.4 30 2 1.28 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 48 74 35 Max 62.5 110 40 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO9926E Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=8A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=7A VGS=1.8V, ID=6A gFS VSD IS Forward Transconductance VDS=5V, ID=8A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.4 30 18 25 21 25 29 0.76 1 2.5 1160 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 187 146 1.5 16 VGS=4.5V, VDS=10V, ID=8A 0.8 3.8 6.2 VGS=5V, VDS=10V, RL=1.25, RGEN=3 IF=8A, dI/dt=100A/s 12.7 51.7 16 17.8 6.8 21 30 25 33 0.6 Min 20 1 5 1 10 1 Typ Max Units V A A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/s 2 A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha Omega Semiconductor, Ltd. AO9926E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 8V VGS =2V 20 ID(A) VGS =1.5V ID(A) 10 20 VGS=5V 15 10 5 VGS =1V 0 0 1 2 3 4 5 VDS(Volts) Figure 1: On-Regions Characteristics 0 0.0 0.5 125C 25C 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics 40 Normalize ON-Resistance 1.6 ID=8A VGS=1.8V VGS=2.5V VGS=4.5V 1.2 RDS(ON)(m) 30 VGS =1.8V VGS =2.5V 1.4 20 VGS =4.5V 10 0 5 10 15 20 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=8A 50 RDS(ON)(m) 40 IS(A) 30 20 25C 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C 1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha Omega Semiconductor, Ltd. AO9926E TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 VDS=10V ID=8A Capacitance (pF) 1600 Ciss 1200 800 400 0 0 5 10 15 20 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss 5 4 VGS(Volts) 3 2 1 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 0.1s 10ms Power (W) 40 TJ(Max)=150C TA=25C ID (Amps) 10.0 30 20 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. |
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